1 of 9 rfmd + triquint = qorvo 22 22 ii nterted odue 4 z to 2 z e 22 is tree ste poer mpiier desined or 02nc ppictions e inter ated input and output 50? match greatly reduces the layout area, bill of materials and manufacturability cost in the customer application. the rfpa5522 is manufactured on an advanced ingap heterojunction bipolar transistor (hbt) process and is capable of achieving linear powers up to 2 3 dbm with an evm <1.8% while maintaining excellent power added efficiency. the device is provided in a 4 .0 mm x 4 .0 mm x 0.9 mm laminate package that meets or exceeds the power requirements of ieee802.11a/n/ac wifi rf systems . gnd rfout gnd vcc1 pdet pa_en vcc2 rc1 rfin 1 3 4 5 11 12 13 14 15 2 reuator 6 7 8 9 10 16 17 18 19 20 nc gnd gnd gnd gnd vcc3 gnd gnd nc nc rc2 functional block diagram ordering information rfpa5522 sb standard 5 - piece s ample b ag rfpa5522 sq standard 25 - piece s ample b ag rfpa5522 sr standard 100 - piece r eel rfpa5522 tr13 standard 2500 - piece r eel rfpa5522 pc k - 410 fully a ssembled e val uation b oard w/5 - piece bag package: qfn , 20 - pin, 4.0mm x 4.0mm x 0.9 mm features p out = 23 dbm , 5v, 11ac, 80mhz mcs9 @ 1.8% evm p out = 25dbm, 5v, 11n, 20/40 mhz, mcs7 @ 3% typical gain = 33db 3.3v functionality high pae integrated regulator input and output matched to 50? integrated power detector, harmonic filter, and notch filter applications customer premise equipment (cpe) wireless access points, gateways routers set - top box applications picocell/femtocell rfpa5522 revision ds 20150303 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com
2 of 9 rfmd + triquint = qorvo 22 absolute maximum rat ings parameter rating unit dc supply voltage - 0.5 to + 6 v dc dc supply current 1000 ma operating temperature range - 40 to +85 oc storage temperature - 40 to +150 oc maximum tx input power into 50? for 11a/n/ac (no damage) . *r1=0 ? + 10 dbm maximum tx input power 10:1 vswr for 11a/n/ac (no damage) . *r1=15? *note: for r1 placement please refer to the applications schematic caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. this is a n ingap pa designed for high duty cycle applications with tj>100 o c nominal operating parameters parameter specification unit condition min typ max compliance 802.11a/n/ac operating frequency 5.180 5. 9 25 ghz extended operating frequency 4.900 5.180 ghz power supply v cc 3.0 5.00 5.25 v pa enable - high 1. 7 3.0 3.3 v pa enable - low 0 0. 5 v 5v transmit performance t= +25 o c, v cc =5.0v, v paen = 3.0 v, unless otherwise noted 11ac 80mhz output power 2 2 2 3 dbm mcs9 256qam 11ac 80mhz evm 1.5 1.8 % - 36.5 - 35 db 11ac 160 mhz output power 22 dbm mcs9 256qam 11ac 16 0mhz evm 1.8 % - 35 db 11n 20/ 40 mhz output power 23.5 2 5 dbm mcs 7 64qam 11n 4 0mhz evm 3 % - 3 0 .5 db 11a output power 23.5 25 dbm 54mbps 64qam 11a devm 3 4 % - 30.5 - 28 db gain 31 33 db gain variation over temp - 2 2.5 db over any 100mhz frequency band margin to spectral mask 5 db m p out =2 3 dbm ; mcs0 160mhz 5 dbm p out =2 5 dbm ; mcs0 80mhz 5 db m p out =2 6 dbm ; mcs0 40mhz; 5 dbm p out =2 7 dbm ; mcs0 20mhz; operating current 285 33 0 ma p out =2 3 dbm 385 430 p out =27 dbm revision ds 20150303 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com
3 of 9 rfpa5522 rfmd + triquint = qorvo parameter specification unit condition min typ max 5v transmit performance t= +25 o c, v cc =5.0v, v paen = 3.0 v, unless otherwise noted quiescent current 1 5 0 ma pa enable current 4 20 u a pa_en high leakage current 1 5 u a rf off; v paen = 0v second harmonic - 45 - 40 dbm/mhz p out = 2 7 dbm third harmonic - 50 - 45 dbm/mhz p out = 2 7 dbm oob rejection - 5 db gain (s21)@ 3.3 ? 3.8ghz 7 db gain ( s21)@ 7.0 ghz input return loss 12 db output return loss 12 db power detect or range 0. 25 v p out = 0dbm 0.65 p out = 23dbm 0. 88 v p out = 2 7 dbm 3.3v transmit performance t= +25 o c, v cc =3.3v, v paen = 3.0 v, unless otherwise noted 11ac 80mhz output power 18 1 9 dbm mcs9 256qam 11ac 80mhz evm 1.5 1.8 % - 36.5 - 35 db 11n 20/ 40 mhz output power 1 9 20 dbm mcs7 64qam 11n 4 0mhz evm 3 % - 30 db 11ac 160 mhz output power 1 8 dbm mcs9 256qam 11ac 16 0mhz evm 1.5 1.8 % - 36.5 - 35 db gain 31 33 db gain variation over temp - 2.5 + 3.0 db over 100mhz band margin to spectral mask 5 db m p out =2 1 dbm ; mcs0 80mhz 5 db m p out = 19 dbm ; mcs0 160mhz 5 dbm p out =2 2 dbm ; mcs0 40mhz 5 db m p out =2 3 dbm ; mcs0 20mhz operating current 210 235 ma p out =19 dbm 275 300 p out =2 3 dbm quiescent current 150 ma pa enable current 375 500 u a pa_en high leakage current 1 5 u a rf off; v paen = 0v second harmonic - 50 - 45 dbm/mhz p out = 2 3 dbm third harmonic - 5 0 - 45 dbm/mhz input return loss 12 db output return loss 12 db power detect or range 0. 25 v p out = 0dbm 0.5 v pout = 18dbm 0.7 v p out = 2 3 dbm general specifications - stability output vswr 4:1 cw signal. no spurious above - 41.25dbm/mhz for non - harmonic related signals. output power range 0 27 dbm revision ds 20150303 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com
4 of 9 rfpa5522 rfmd + triquint = qorvo parameter specification unit condition min typ max general specifications - stability output vswr 4:1 cw signal. no spurious above - 41.25dbm/mhz for non - harmonic related signals. output power range 0 27 dbm output p1db 33 dbm cw signal; 5v 29 dbm cw signal; 3.3v ramp on/off time 200 ns 10 - 90% / 90 - 10% of gain general specifications thermal resistance * 32 c/w at pout=27dbm esd hbm 500 v eia/jesd22 - 114a; all pins esd cdm 500 v jesd22 - c101c; all pins revision ds 20150303 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com
5 of 9 rfpa5522 rfmd + triquint = qorvo rfpa5522 5v applications schematic paen pdet j 2 rf _ out 50 ? strip j 1 rf _in 50 ? strip vcc 2 c 1 2 . 2 uf c 3 2 . 2 f c 5 1 nf c 2 2 . 2 uf 6 7 8 9 4 3 20 19 18 17 2 1 11 12 13 14 u1 rfpa 5522 10 15 5 16 c 6 10 pf c 9 3 . 3 nf r 2 560 oh c 4 5 . 6 nf r 4 750 oh vcc 1 vcc 3 c 7 10 pf c 8 10 pf r 1 0 oh *0402 component size required revision ds 20150303 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com
6 of 9 rfpa5522 rfmd + triquint = qorvo rfpa5522 3.3v applications schematic pdet j 2 rf _ out 50 ? strip j 1 rf _in 50 ? strip vcc 2 c 1 2 . 2 uf c 3 2 . 2 f c 2 2 . 2 uf 6 7 8 9 4 3 20 19 18 17 2 1 11 12 13 14 u1 rfpa 5522 10 15 5 16 c 6 10 pf vcc 1 vcc 3 c 7 10 pf c 8 10 pf r 1 0 oh 0 ? 0 ? 2 k ? 8 . 2 nf pa _ en 330 pf *0402 component size required revision ds 20150303 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com
7 of 9 rfpa5522 rfmd + triquint = qorvo pin out gnd rfout gnd vcc 1 pdet pa _ en vcc 2 rc 1 rfin 1 3 4 5 11 12 13 14 15 2 6 7 8 9 10 16 17 18 19 20 nc gnd gnd gnd gnd vcc 3 gnd gnd nc nc rc 2 package drawing revision ds 20150303 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com
8 of 9 rfpa5522 rfmd + triquint = qorvo pcb patterns revision ds 20150303 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com
9 of 9 rfpa5522 rfmd + triquint = qorvo pin names and descriptions pin name description 1 nc not connected internally. it may be left floating or connected to ground. 2 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 3 rfin rf inp ut, internally matched to 50? and dc shorted . external dc blocking capacitor required. 4 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 5 pa_en pa enable pin . apply <0.4v dc . apply 1.5v dc to v cc to enable pa. 6 rc1 tuning rc pin 1. see evb schematic for details. 7 rc2 tuning rc pin 2. see evb schematic for details. 8 nc not connected internally. it may be left floating or connected to ground. 9 nc not connected internally. it may be left floating or connected to ground. 10 pdet power detector . p rovides an output voltage proportional to the rf output power level. 11 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 12 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 13 rfout rf out p ut, internally matched to 50? and dc shorted . external dc blocking capacitor required. 14 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 15 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 16 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 17 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 18 vcc3 third stage supply voltage 19 vcc2 second stage supply voltage. 20 vcc1 first stage supply voltage. pkg base gnd ground connection. the back side of the package should be connected to the ground plan though as short of a connection as possible. pcb vias under the device are recommended. revision ds 20150303 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com
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